Graphene
2009, Jul 26 -- Aug 08
Organizers:
F. Guinea (ICMM-CSIC)
M. I. Katsnelson (Radboud U. Nijmegen)
M. A. H. Vozmediano (ICMM-CSIC)
About four years ago, the possibility to isolate and investigate graphene, i.e. individual layers of graphite only one-atom-thick, have been demonstrated. Further, experiments were reported showing that charge carriers in graphene behave as two-dimensional relativistic particles. In the past, the study of relativistic particles has been the exclusive domain of high-energy physics. In graphene, the physics of relativistic electrons is now experimentally accessible in solid-state devices, whose behavior differs drastically from that of similar devices fabricated with common semiconductors. As a consequence, new unexpected phenomena have been observed, and phenomena that are well understood in common semiconductors 杝uch as the quantum Hall effect or weak-localization- exhibit surprising differences in graphene. Thus, graphene devices enable the study of relativistic dynamics in controllable nano-electronic circuits ('relativistic electrons on-a-chip') and their behavior questions our most basic understanding of electronic processes in solids. It allows also to simulate in soild-state experiments some subtle and previously unreachable effects from high-energy physics, such as Klein tunneling and vacuum breakdown. At the same time, graphene is considered as a perspective material for 'post-silicon electronics', and the first graphene transistors were already created and studied. Being both transparent and highly conducting, graphene has a very high potential for use in optical devices. Chemical, mechanical and other properties of graphene also open new ways for numerous important applications. It is not surprising therefore than graphene became one of the hottest subjects in contemporary physics and materials science and the number of publications in the field, including top-level scientific journals, as well as the number of researchers involved, grew exponentially.
The purpose of the workshop in Benasque is to bring together leading experts in the field, including experiment, theory, and applications, and to discuss fundamentals and perspectives of this rapidly growing branch of science.
This is a preliminary list of confirmed participants:
|
Andrei, Eva Ando, Suneya Castro Neto, Antonio Dresselhaus, Mildred Falko, Volodia |
Fasolino, Annalisa Geim, Andre Jarillo, Pablo Morpurgo, Alberto Savchenko, Alex |
Organizers:
Francisco Guinea L髉ez, Instituto de Ciencia de Materiales de Madrid, CSIC.
Mikhail Katsnelson, Department of Theoretical Physics, RU Nijmegen.
Maria 羘geles H. Vozmediano, Instituto de Ciencia de Materiales de Madrid, CSIC.
The center provides free buses with depart:
From Barcelona, Universitat de Barcelona, Diagonal 647
(metro: Palau Reial, green line) at 15.00h with a stop at the
airport (at the entrance of Car Park A, next to the Police Office, on your left from terminal A) at 15:30h.
Return buses:
From Benasque to Barcelona airport will depart at
9.00h.
The trip by bus to Barcelona
takes 6h.
The trip by car only takes 3h 30m.
Bus trajectories and dates:
- Barcelona-Benasque, July 26.
- Benasque-Barcelona, August 8
Deadline for applications is April 30
Further Information.
Deadline for applications is April 30.